I will be sharing this class with Dr Norlaili Mohd Noh, as she will be teaching the 2nd half of the class covering BJT and FET. I will be covering the basics pertaining to the solid state fundamentals for the next 7 weeks. The first 3 weeks will be on fundamentals on atoms, energy band, intrinsic versus extrinsic materials, diffusion and drift mechanism in semiconductors, minority versus majority carriers, excess carrier characteristics leading to the deployment of pn junction. With this configuration, you will then be introduced to first device called the diodes. We will initially explore the physical characteristics leading to the terminal diode current characterization. Application on diodes will be explored such as half-bridge, full-bridge, pin, Shottky, and clamping which will enable you to design various essential circuits in either digital or analog applications.
For those who are taking it to improve your grade, please be sure that both EEE132 and EEE133 do not appear on your transcript. If so, please rectify it with the school administration. The previous semester (SII 2012-13), the focused was on the electronic circuits. However, 2 years ago, during semester II 2011-12 the material was purely on Solid State Devices. After series of rectification and internal discussions, this semester we will merge these two topics into one: hence the name Electronic Devices and Circuits which merged these 2 big concepts.
OBE in pdf format
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Monday, February 17, 2014
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